US Patent Application 18347512. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kwangjin Moon of Hwaseong-si (KR)
Pilkyu Kang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
'This abstract first appeared for US patent application 18347512 titled 'SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a semiconductor device that includes a substrate with two surfaces. The device has an active region on one surface, which is separated by an isolation region. The active region contains multiple active fins that extend in one direction and are separated by a second isolation region. Adjacent to the fins, there is a buried conductive wiring in a trench, along with a filling insulation portion. An interlayer insulation layer covers the isolation regions, conductive wiring, and fins. There is also a contact structure that penetrates the interlayer insulation layer and connects to the buried conductive wiring. Additionally, there is a conductive through structure that extends through the substrate and connects to the buried conductive wiring.
Original Abstract Submitted
A semiconductor device includes a substrate having a first and second surface opposite to each other, and an active region on the first surface and defined by a first isolation region; a plurality of active fins on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.
