US Patent Application 18338707. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract
Contents
VARIABLE RESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Soichiro Mizusaki of Suwon-si (KR)
VARIABLE RESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18338707 Titled 'VARIABLE RESISTANCE MEMORY DEVICE'
Simplified Explanation
This abstract describes a type of memory device that uses a variable resistance layer. The device consists of a first conductive element, a second conductive element, and the variable resistance layer. The variable resistance layer is made up of two layers, with the second layer having a different valence (a measure of the number of electrons in an atom's outer shell) than the first layer. The first and second conductive elements are placed on the variable resistance layer, but are separated from each other. This creates a path for electric current to flow through the variable resistance layer in a direction perpendicular to the stacking direction of the two layers.
Original Abstract Submitted
A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
