US Patent Application 18336754. SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY simplified abstract
Contents
SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY
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SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336754 Titled 'SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY'
Simplified Explanation
The abstract describes a semiconductor device that consists of two rows of standard cells placed on a substrate. The first row has cells with a certain height, while the second row has cells with a different height. There is also a power line that runs along the boundary between the first and second standard cells in a specific direction.
Original Abstract Submitted
A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.
