US Patent Application 18324897. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE simplified abstract

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE

Organization Name

STMICROELECTRONICS S.r.l.

Inventor(s)

Michele Derai of Milano (IT)

Guendalina Catalano of Milano (IT)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18324897 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for attaching a semiconductor die to a substrate and creating electrically conductive formations on the die.

• The semiconductor die is attached to a substrate, such as a leadframe.
• The die has contact pads made of a first electrically conductive material.
• An encapsulation material is molded onto the die.
• Laser beam energy is used to activate the encapsulation material at selected locations.
• Electrically conductive formations, called vias, are created in the activated areas.
• The vias are made of a second electrically conductive material different from the contact pad material.
• A nickel layer is formed over the contact pad material to promote adhesion between the second conductive material and the first conductive material.

Original Abstract Submitted

A semiconductor die is attached on a die-attachment portion of a substrate such as a leadframe. The semiconductor die has a front surface opposite the substrate and one or more contact pads at the front surface having an outer surface finishing of a first electrically conductive material such as NiPd or Al. An encapsulation of laser direct structuring, LDS material is molded onto the semiconductor die attached on the substrate. Laser beam energy is applied to selected locations of the front surface of the encapsulation of LDS material to activate the LDS material at the selected locations and structure therein electrically conductive formations comprising one or more vias towards the contact pad. The vias comprise a second electrically conductive material that is different from the first electrically conductive material of the outer surface finishing of the contact pad. Prior to growing the second electrically conductive material a nickel layer is formed over the outer surface finishing of the contact pad, wherein the nickel layer promotes adhesion between the second electrically conductive material and the first electrically conductive material.