US Patent Application 18310002. METHOD OF PRODUCING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoshiki Yamaguchi of Suita-shi (JP)
Hiroki Hayashi of Anan-shi (JP)
Satoshi Okumura of Anan-shi (JP)
Minoru Yamamoto of Anan-shi (JP)
Hiroaki Tamemoto of Anan-shi (JP)
METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18310002 titled 'METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for producing a semiconductor device by detecting and removing defects in a semiconductor layer.
- The method involves forming a metal film on the semiconductor layer.
- A first laser emitting red or infrared light is used to remove a portion of the metal film and expose the semiconductor layer.
- A second laser emitting ultraviolet light is then used to remove a portion of the semiconductor layer, including the detected defect.
- The diameter of the metal film portion is larger than the diameter of the semiconductor layer portion in a plan view.
- The metal film portion overlaps with the semiconductor layer portion in the plan view.
Original Abstract Submitted
A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.
