US Patent Application 18234942. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Shunpei Yamazaki of Tokyo (JP)

Kensuke Yoshizumi of Isehara (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18234942 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device consisting of a first transistor, a second transistor, and a capacitor.

• The second transistor and the capacitor are positioned above the first transistor, overlapping with its gate.
• The gate of the first transistor is directly connected to the semiconductor layer of the second transistor and the dielectric layer of the capacitor.
• The second transistor is a vertical transistor, with its channel direction perpendicular to the upper surface of the semiconductor layer of the first transistor.

Original Abstract Submitted

A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.