US Patent Application 18232949. MEMORY DEVICES FOR MULTIPLE READ OPERATIONS simplified abstract

From WikiPatents
Jump to navigation Jump to search

MEMORY DEVICES FOR MULTIPLE READ OPERATIONS

Organization Name

Micron Technology, Inc.

Inventor(s)

Eric N. Lee of San Jose CA (US)

Kishore Kumar Muchherla of Fremont CA (US)

Jeffrey S. Mcneil of Nampa ID (US)

Jung-Sheng Hoei of Newark CA (US)

MEMORY DEVICES FOR MULTIPLE READ OPERATIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232949 titled 'MEMORY DEVICES FOR MULTIPLE READ OPERATIONS

Simplified Explanation

The patent application describes a memory device that consists of an array of memory cells, access lines, and control logic.

  • The memory cells are arranged in strings, with each string containing multiple series-connected memory cells.
  • Each access line is connected to the control gate of a memory cell in each string.
  • The control logic is designed to perform various read operations on the memory cells.
  • The memory cells can be opened for multiple read operations.
  • The first page data is read from the memory cells connected to a selected access line.
  • The second page data is also read from the same memory cells.
  • After reading the first and second page data, the memory cells are closed.


Original Abstract Submitted

Memory devices might include an array of memory cells, a plurality of access lines, and control logic. The array of memory cells includes a plurality of strings of series-connected memory cells. Each access line of the plurality of access lines is connected to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells. The control logic is configured to: open the array of memory cells for multiple read operations; read first page data from respective memory cells coupled to a selected access line of the plurality of access lines; read second page data from the respective memory cells coupled to the selected access line; and close the array of memory cells subsequent to reading the first page data and the second page data.