US Patent Application 18232937. METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR GAP simplified abstract
Contents
METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR GAP
Organization Name
Inventor(s)
LIANG-PIN Chou of TAOYUAN CITY (TW)
METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR GAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232937 titled 'METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR GAP
Simplified Explanation
The patent application describes a method for preparing a semiconductor device.
- The method involves forming two dielectric structures over a semiconductor substrate.
- A conductive material is then formed over the dielectric structures, extending into an opening between them.
- The conductive material is partially removed to create two bit lines in the opening.
- Capacitor contacts are formed in the dielectric structures.
- A sealing dielectric layer is formed over the bit lines, creating an air gap between the layer and the substrate.
- Finally, capacitors are formed over the capacitor contacts.
Original Abstract Submitted
A method for preparing a semiconductor device, includes: forming a first dielectric structure and a second dielectric structure over a semiconductor substrate; forming a conductive material over the first dielectric structure and the second dielectric structure, wherein the conductive material extends into a first opening between the first dielectric structure and the second dielectric structure; partially removing the conductive material to form a first bit line and a second bit line in the first opening; forming a first capacitor contact and a second capacitor contact in the first dielectric structure and the second dielectric structure, respectively; forming a sealing dielectric layer over the first bit line and the second bit line such that an air gap is formed between the sealing dielectric layer and the semiconductor substrate; and forming a first capacitor and a second capacitor over the first capacitor contact and the second capacitor contact, respectively.
