US Patent Application 18232833. METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR SPACER simplified abstract

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR SPACER

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

JUNG-HSING Chien of TAOYUAN CITY (TW)

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232833 titled 'METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH AIR SPACER

Simplified Explanation

The patent application describes a semiconductor device with composite pillars, a dielectric isolation structure, a sealing layer, and air spaces.

• The composite pillars consist of a conductive pillar and a dielectric cap.
• The dielectric isolation structure is placed between adjacent composite pillars and includes an air gap enclosed by a liner layer.
• The sealing layer is in contact with the top portion of the dielectric isolation structure and the top of the dielectric cap.
• Air spacers are formed between the sealing layer, the dielectric isolation structure, and the conductive pillar.

Original Abstract Submitted

The present disclosure provides a semiconductor device including composite pillars, a dielectric isolation structure, a sealing layer, and air spaces. The composite pillars are disposed over a substrate. Each of the composite pillars include a conductive pillar and a dielectric cap over the conductive pillar. The dielectric isolation structure is disposed between adjacent two of the composite pillars. The dielectric isolation structure includes an air gap and a liner layer enclosing the air gap. The sealing layer is at least in contact with a top portion of the dielectric isolation structure and a top of the dielectric cap. The air spacers are formed between the sealing layer, the dielectric isolation structure and the conductive pillar.