US Patent Application 18232745. ENHANCING LITHOGRAPHY OPERATION FOR MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract

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ENHANCING LITHOGRAPHY OPERATION FOR MANUFACTURING SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Yih-Chen Su of Taichung City (TW)

Tzu-Yi Wang of Hsinchu City (TW)

Ta-Cheng Lien of Cyonglin Township (TW)

ENHANCING LITHOGRAPHY OPERATION FOR MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232745 titled 'ENHANCING LITHOGRAPHY OPERATION FOR MANUFACTURING SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a method of treating the surface of a reticle used in lithography operations.

  • The reticle is retrieved from a reticle library and transferred to a treatment device.
  • The surface of the reticle is treated by irradiating it with UV radiation while ozone fluid is present for a specific amount of time.
  • After treatment, the reticle is transferred to an exposure device for lithography operations on a wafer.
  • The surface of the wafer is imaged to generate an image of the photo resist pattern.
  • The generated image is analyzed to determine the uniformity of the photo resist pattern.
  • If the uniformity does not meet a predetermined threshold, the irradiation time is increased.


Original Abstract Submitted

A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.

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