US Patent Application 18232718. Contact Structure For Semiconductor Device simplified abstract
Contents
Contact Structure For Semiconductor Device
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Hung Chu of Taipei City (TW)
Shuen-Shin Liang of Hsinchu County (TW)
Keng-Chu Lin of Ping-Tung (TW)
Pinyen Lin of Rochester NY (US)
Sung-Li Wang of Zhubei City (TW)
Contact Structure For Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232718 titled 'Contact Structure For Semiconductor Device
Simplified Explanation
- The patent application describes a semiconductor structure and a method for forming it. - The structure includes a substrate, a gate structure, a source/drain contact structure, a layer of dielectric material, a layer of organometallic material, and a trench conductor layer. - The organometallic material is located between the dielectric material and the trench conductor layer. - The method involves forming the various layers and structures in a specific sequence to create the semiconductor structure. - The invention aims to improve the performance and functionality of semiconductor devices.
Original Abstract Submitted
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure and over the gate structure, a layer of organometallic material formed through the layer of dielectric material, and a trench conductor layer formed through the layer of dielectric material and in contact with the S/D contact structure and the gate structure. The layer of organometallic material can be between the layer of dielectric material and the trench conductor layer.
