US Patent Application 18232674. PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF simplified abstract

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PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Yun-Yue Lin of Hsinchu City (TW)

PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232674 titled 'PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF

Simplified Explanation

The abstract describes a pellicle for a reflective photo mask, which is a device used in the manufacturing of semiconductors and other electronic components.

  • The pellicle consists of several layers: a frame, a core layer, a first capping layer, an anti-reflection layer, a barrier layer, and a heat emissive layer.
  • The core layer is the main component of the pellicle and has a front surface and a rear surface.
  • The first capping layer is placed on the front surface of the core layer.
  • The anti-reflection layer is then applied on top of the first capping layer to reduce unwanted reflections.
  • A barrier layer is added on the anti-reflection layer to provide protection.
  • Finally, a heat emissive layer is placed on the barrier layer to dissipate heat generated during the manufacturing process.


Original Abstract Submitted

A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

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