US Patent Application 18232518. SYSTEMS AND METHODS OF TESTING MEMORY DEVICES simplified abstract

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SYSTEMS AND METHODS OF TESTING MEMORY DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Meng-Han Lin of Hsinchu City (TW)]]

[[Category:Chia-En Huang of Xinfeng Township (TW)]]

SYSTEMS AND METHODS OF TESTING MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232518 titled 'SYSTEMS AND METHODS OF TESTING MEMORY DEVICES

Simplified Explanation

The patent application describes a memory device with a first memory block, which includes a memory sub-array and an interface portion. It also includes interconnect structures to connect the memory sub-array to transistors. There are also test structures to simulate the electrical connections of these interconnect structures.

  • Memory device with a first memory block
  • First memory block includes a memory sub-array and an interface portion
  • Interconnect structures connect the memory sub-array to transistors
  • Test structures simulate the electrical connections of the interconnect structures


Original Abstract Submitted

A memory device includes a first memory block. The first memory block includes a first memory sub-array and a first interface portion disposed next to the first memory sub-array. The first memory block further includes a plurality of first interconnect structures electrically coupled to the first memory sub-array through the first interface portion, and a second plurality of interconnect structures configured to electrically couple a corresponding one of the plurality of first interconnect structures to a transistor. The memory device further includes a first test structure and a second test structure disposed next to the first memory block, each configured to simulate electrical connections of the plurality of second interconnect structures. The first and second test structures are electrically coupled to each other and are each electrically isolated form the first memory block.

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