US Patent Application 18232306. SEMICONDUCTOR DEVICE INCLUDING BACK SIDE POWER SUPPLY CIRCUIT simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE INCLUDING BACK SIDE POWER SUPPLY CIRCUIT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Gerben Doornbos of Kessel-Lo (BE)]]

[[Category:Marcus Johannes Henricus Van Dal of Linden (BE)]]

SEMICONDUCTOR DEVICE INCLUDING BACK SIDE POWER SUPPLY CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232306 titled 'SEMICONDUCTOR DEVICE INCLUDING BACK SIDE POWER SUPPLY CIRCUIT

Simplified Explanation

The patent application describes a semiconductor device with a main circuit and a backside power delivery circuit.

  • The device includes a substrate, with the main circuit on the front surface and the power delivery circuit on the back surface.
  • The power delivery circuit has multiple power supply wirings for different voltages.
  • The power supply wirings are embedded in an insulating layer on the back surface of the substrate.
  • The power delivery circuit is connected to the main circuit through a through-silicon via (TSV) passing through the substrate.
  • The TSV allows the power delivery circuit to supply the main circuit with the required voltage.


Original Abstract Submitted

A semiconductor device includes a substrate, a main circuit disposed over a front surface of the substrate, and a backside power delivery circuit disposed over a back surface of the substrate. The backside power delivery circuit includes a first main power supply wiring for supplying a first voltage, a second main power supply wiring for supplying a second voltage, a first local power supply wiring, and a first switch coupled to the first main power supply wiring and the first local power supply wiring. The first main power supply wiring, the second main power supply wiring and the first local power supply wiring are embedded in a first back side insulating layer disposed over the back surface of the substrate. The first local power supply wiring is coupled to the main circuit via a first through-silicon via (TSV) passing through the substrate for supplying the first voltage.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18232306._SEMICONDUCTOR_DEVICE_INCLUDING_BACK_SIDE_POWER_SUPPLY_CIRCUIT_simplified_abstract&oldid=8963"