US Patent Application 18232085. SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE simplified abstract

SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Feng-Chien Hsieh of Pingtung City (TW)

Yun-Wei Cheng of Taipei City (TW)

Kuo-Cheng Lee of Tainan City (TW)

Chen-Ming Wu of Tainan City (TW)

SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232085 titled 'SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE

Simplified Explanation

The patent application describes a semiconductor arrangement with a photodiode and isolation structures.

• The photodiode is located in a substrate and extends to a certain depth from one side.
• The isolation structure surrounds the photodiode and includes a well that extends into one side of the substrate.
• A deep trench isolation is present on the other side of the substrate, and part of it is positioned underneath the first well.

Original Abstract Submitted

A semiconductor arrangement includes a photodiode extending to a first depth from a first side in a substrate. An isolation structure laterally surrounds the photodiode and includes a first well that extends into a first side of the substrate. A deep trench isolation extends into a second side of the substrate and at least a portion of the deep trench isolation underlies the first well.