US Patent Application 18231196. APPARATUS FOR ELECTRO-CHEMICAL PLATING simplified abstract
Contents
APPARATUS FOR ELECTRO-CHEMICAL PLATING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Kuo-Lung Hou of Taichung City (TW)]]
[[Category:Ming-Hsien Lin of Taichung City (TW)]]
APPARATUS FOR ELECTRO-CHEMICAL PLATING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231196 titled 'APPARATUS FOR ELECTRO-CHEMICAL PLATING
Simplified Explanation
The abstract describes an electrochemical plating apparatus used for removing the edge bevel of a wafer during the manufacturing process.
- The apparatus includes a cell chamber with two or more nozzles positioned near the edge of the wafer.
- Each nozzle is equipped with a flow regulator that controls the width of the deposited film flowing out of the nozzle.
- A controller is used to regulate the flow regulator and ensure that the deposited film has a predetermined surface profile.
- The nozzles are placed in different positions above the wafer, either radially or angularly.
Original Abstract Submitted
An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate a tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.
