US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract
TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME
Organization Name
Taiwan Semiconductor Manufacturing Company Limited
Inventor(s)
Mauricio Manfrini of Zhubei City (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18230864 titled 'TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME
Simplified Explanation
The patent application describes a thin film transistor and a method of making it.
- The thin film transistor includes a substrate, a word line, a semiconductor layer, a hydrogen diffusion barrier layer, a gate dielectric layer, and source and drain electrodes.
- The word line is placed on the substrate.
- The semiconductor layer has a source region, a drain region, and a channel region between them, overlapping with the word line in a vertical direction.
- The hydrogen diffusion barrier layer also overlaps with the channel region in the vertical direction.
- The gate dielectric layer is positioned between the channel region and the word line.
- Source and drain electrodes are connected to the source and drain regions respectively.
Original Abstract Submitted
A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.
