US Patent Application 18230338. SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ting-Ya Lo of Hsinchu (TW)]]

[[Category:Cheng-Chin Lee of Taipei (TW)]]

[[Category:Shao-Kuan Lee of Kaohsiung (TW)]]

[[Category:Chi-Lin Teng of Taichung (TW)]]

[[Category:Hsin-Yen Huang of New Taipei (TW)]]

[[Category:Hsiaokang Chang of Hsinchu (TW)]]

[[Category:Shau-Lin Shue of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18230338 titled 'SEMICONDUCTOR DEVICE STRUCTURE HAVING AIR GAP AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming an interconnect structure in electronic devices. Here are the key points:

• The method involves forming a first conductive layer over a dielectric layer.
• One or more openings are created in the first conductive layer to expose parts of the dielectric layer and the first conductive layer.
• A capping layer is then applied to cover the exposed areas of the dielectric layer and the first conductive layer.
• A sacrificial layer is formed within the openings.
• The sacrificial layer is recessed, creating space for a support layer.
• The sacrificial layer is removed, leaving air gaps within the openings.
• A dielectric fill is added on top of the support layer.
• The first conductive layer is replaced with a second conductive layer within the openings.
• A two-dimensional (2D) material layer is selectively formed on the second conductive layer.
• Etch stop layers and a dielectric material are added on top of the 2D material layer.
• A contact opening is created through the layers to expose the top surface of the second conductive layer.
• A first conductive feature is formed within the contact opening.

Overall, this method allows for the creation of an interconnect structure with air gaps and a 2D material layer, which can enhance the performance and efficiency of electronic devices.

Original Abstract Submitted

A method for forming an interconnect structure includes forming a first conductive layer over a dielectric layer, forming one or more openings in the first conductive layer to expose portions of dielectric surface of the dielectric layer and conductive surfaces of the first conductive layer, wherein the one or more openings separates the first conductive layer into one or more portions. The method includes forming a capping layer on exposed portions of the dielectric surface of the dielectric layer and conductive surface of the first conductive layer, forming a sacrificial layer in the one or more openings, recessing the sacrificial layer, forming a support layer on the recessed sacrificial layer in each of the one or more openings, removing the sacrificial layer to form an air gap in each of the one or more openings, forming a dielectric fill on the support layer, replacing the first conductive layer in the one or more openings with a second conductive layer, selectively forming a two-dimensional (2D) material layer on the second conductive layer, forming a first etch stop layer on the dielectric fill and the support layer, forming a second etch stop layer on the first etch stop layer and the 2D material layer, forming a dielectric material on the second etch stop layer, forming a contact opening through the dielectric material, the second etch stop layer, and the 2D material layer to expose a top surface of the second conductive layer, and forming a first conductive feature in the contact opening.