US Patent Application 18227231. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jia-Lin Wei of Hsinchu (TW)

Ming-Hui Weng of Hsinchu (TW)

Chih-Cheng Liu of Hsinchu (TW)

Yi-Chen Kuo of Hsinchu (TW)

Yen-Yu Chen of Hsinchu (TW)

Yahru Cheng of Hsinchu (TW)

Jr-Hung Li of Hsinchu (TW)

Ching-Yu Chang of Hsinchu (TW)

Tze-Liang Lee of Hsinchu (TW)

Chi-Ming Yang of Hsinchu (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18227231 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Simplified Explanation

- The patent application describes a method of manufacturing a semiconductor device using a multilayer photoresist structure. - The multilayer photoresist structure includes two or more metal-containing photoresist layers with different physical parameters. - The metal-containing photoresist is formed by reacting a first precursor and a second precursor. - Each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters, such as the type and amount of precursors used, the length of time for each formation operation, and the heating conditions. - The multilayer photoresist structure is selectively exposed to actinic radiation to create a latent pattern. - The latent pattern is then developed by applying a developer to the selectively exposed multilayer photoresist structure, resulting in the formation of the desired pattern.

Original Abstract Submitted

A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.