US Patent Application 18224861. SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS simplified abstract
Contents
SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS
Organization Name
Inventor(s)
Suketu Arun Parikh of San Jose CA (US)
SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224861 titled 'SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS
Simplified Explanation
- The patent application describes a method for etching a metal containing feature. - A pattern mask is used to etch layers of material and expose a portion of the metal containing feature. - The exposed portion of the metal containing feature is etched and replaced by the growth of a filler dielectric. - This process helps reduce unwanted conductivity between adjacent metal containing features.
Original Abstract Submitted
A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.
