US Patent Application 18224861. SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS simplified abstract

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SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS

Organization Name

Applied Materials, Inc.


Inventor(s)

Suketu Arun Parikh of San Jose CA (US)

SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18224861 titled 'SELF-ALIGNMENT ETCHING OF INTERCONNECT LAYERS

Simplified Explanation

- The patent application describes a method for etching a metal containing feature. - A pattern mask is used to etch layers of material and expose a portion of the metal containing feature. - The exposed portion of the metal containing feature is etched and replaced by the growth of a filler dielectric. - This process helps reduce unwanted conductivity between adjacent metal containing features.


Original Abstract Submitted

A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.