US Patent Application 18215301. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18215301 Titled 'SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a semiconductor device that includes a substrate and bottom electrodes. The bottom electrodes have two regions, with the second region containing an additional element compared to the first region. There is a first supporting pattern on the substrate that is in contact with a portion of the side surface of each bottom electrode. A top electrode is placed on the bottom electrodes, with a dielectric layer in between. A capping layer is also present between the bottom electrodes and the dielectric layer, covering the top and bottom surfaces of the first supporting pattern. The second region of the bottom electrodes is in contact with the capping layer, and the capping layer and the dielectric layer are made of different materials.
Original Abstract Submitted
A semiconductor device including a substrate; bottom electrodes on the substrate, each bottom electrode including a first region and a second region, the second region containing an additional element relative to the first region; a first supporting pattern on the substrate and in contact with a portion of a side surface of each bottom electrode; a top electrode on the bottom electrodes; a dielectric layer between the bottom electrodes and the top electrode; and a capping layer between the bottom electrodes and the dielectric layer, the capping layer covering a top surface and a bottom surface of the first supporting pattern, wherein the second region is in contact with the capping layer, and the capping layer and the dielectric layer include different materials from each other.
