US Patent Application 18214623. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Toshinari Sasaki of Atsugi (JP)
Junichiro Sakata of Atsugi (JP)
Hiroki Ohara of Sagamihara (JP)
Shunpei Yamazaki of Setagaya (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18214623 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for manufacturing a highly reliable semiconductor device with stable electric characteristics. The method involves the use of a thin film transistor made of an oxide semiconductor layer.
- The objective is to provide a reliable semiconductor device with stable electric characteristics.
- The method aims to reduce impurities such as moisture in the oxide semiconductor layer.
- Heat treatment is performed to improve the purity of the oxide semiconductor layer and remove impurities.
- The heat-treated oxide semiconductor layer is slowly cooled under an oxygen atmosphere.
- The method helps in achieving a highly reliable semiconductor device at a lower cost and with high productivity.
Original Abstract Submitted
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
