US Patent Application 18202403. DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE simplified abstract
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DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
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DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18202403 titled 'DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
Simplified Explanation
The patent application describes a display device with specific features:
- The display device includes an oxide semiconductor layer, a gate electrode, and a gate insulating layer.
- A light-shielding layer overlaps part of the oxide semiconductor layer.
- A first insulating layer covers the oxide semiconductor layer, gate electrode, and gate insulating layer.
- The first insulating layer has a first opening with a side wall that overlaps the light-shielding layer and a side wall that does not overlap the light-shielding layer.
- A transparent conductive layer is arranged above the first insulating layer and is connected to the oxide semiconductor layer through the first opening.
- The transparent conductive layer is arranged in an area that overlaps the side wall overlapping the light-shielding layer and is not arranged in at least part of an area that overlaps the side wall not overlapping the light-shielding layer.
Original Abstract Submitted
A display device includes: an oxide semiconductor layer; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a light-shielding layer overlapping part of the oxide semiconductor layer in a plan view; a first insulating layer covering the oxide semiconductor layer, the gate electrode, and the gate insulating layer, the first insulating layer including a first opening including a first side wall overlapping the light-shielding layer and a second side wall not overlapping the light-shielding layer in a plan view; and a transparent conductive layer arranged above the first insulating layer and connected to the oxide semiconductor layer via the first opening. The transparent conductive layer is arranged in an area overlapping the first side wall and is not arranged in at least part in an area overlapping the second side wall in a plan view.
