US Patent Application 18201995. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Junhyeok Ahn of Suwon-si (KR)]]

[[Category:Jinkuk Bae of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18201995 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with various layers and structures.

• The device includes a first contact structure, a first conductive wiring, a first etch-stop layer, and an interlayer insulating layer.
• There is also a second contact structure, a second conductive wiring, and a barrier layer.
• The barrier layer has a first barrier portion, a second etch-stop layer, and an air gap.
• The device is designed to improve the performance and functionality of semiconductor devices.

Original Abstract Submitted

A semiconductor device includes a first contact structure connected to the lower structure, a first conductive wiring connected to the first contact structure, a first etch-stop layer and an interlayer insulating layer sequentially provided on the first conductive wiring, a second contact structure passing through the first etch-stop layer, provided in the interlayer insulating layer, and connected to the first conductive wiring, a second conductive wiring provided on the second contact structure and provided in the interlayer insulating layer, a barrier layer including a first barrier portion on a bottom surface of the second contact structure, a second etch-stop layer provided on a top surface of the second conductive wiring and a top surface of the interlayer insulating layer, and an air gap between the barrier layer and the extension portion.