US Patent Application 18201533. BOLOMETER-TYPE INFRARED DETECTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

BOLOMETER-TYPE INFRARED DETECTOR AND METHOD FOR MANUFACTURING THE SAME

Organization Name

NEC Corporation

Inventor(s)

Tomo Tanaka of Tokyo (JP)

Masahiko Ishida of Tokyo (JP)

Ryota Yuge of Tokyo (JP)

BOLOMETER-TYPE INFRARED DETECTOR AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18201533 titled 'BOLOMETER-TYPE INFRARED DETECTOR AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a bolometer type infrared detector.

  • The detector includes a substrate, a bolometer film made of semiconducting carbon nanotubes, and two electrodes.
  • The electrodes are spaced apart and connected to the bolometer film.
  • At least one of the electrodes is made of a metal alloy consisting of two or more metals selected from a specific group.
  • The specific group includes metals such as Li, Be, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, La, Hf, Ta, Ir, Pt, Au, and Bi.


Original Abstract Submitted

Disclosed is a bolometer type infrared detector comprising: a substrate, a bolometer film comprising semiconducting carbon nanotubes, and two electrodes spaced from each other and connected to the bolometer film, wherein at least one of the two electrodes is formed of a metal alloy comprising at least two metals selected from the group consisting of Li, Be, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, La, Hf, Ta, Ir, Pt, Au, and Bi.