US Patent Application 18200910. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Tomohiko Niizeki of Tokyo (JP)

Maju Tomura of Miyagi (JP)

Yoshihide Kihara of Miyagi (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18200910 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Simplified Explanation

The patent application describes a method for processing substrates using a substrate processing apparatus.

• The apparatus includes a chamber, a substrate support, an upper electrode, and a plurality of electromagnets.
• The method involves selecting a polarity modification pattern for the electromagnets during the etching process.
• Plasma is generated from a processing gas supplied into the chamber.
• The substrate is then etched based on the selected polarity modification pattern.
• The invention aims to improve the efficiency and effectiveness of substrate processing.

Original Abstract Submitted

A substrate processing method includes: providing a substrate processing apparatus including a chamber, a substrate support that supports a substrate in the chamber, an upper electrode facing a center of the substrate, and a plurality of electromagnets arranged radially around the center of the upper electrode; selecting a polarity modification pattern to be used for the plurality of electromagnets during an etching; and generating plasma from a processing gas supplied into the chamber, and etching the substrate based on the polarity modification pattern.