US Patent Application 18200135. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Jeonil Lee of Suwon-si (KR)]]

[[Category:Kyunghwan Lee of Suwon-si (KR)]]

[[Category:Min Hee Cho of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18200135 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with a specific structure and configuration.

• The device includes a single crystal semiconductor pattern with a first source/drain region, a second source/drain region, and a first vertical channel region between them.
• The second source/drain region is positioned at a higher level than the first source/drain region.
• There is a first gate electrode that faces one side surface of the single crystal semiconductor pattern.
• A first gate dielectric layer is present between the single crystal semiconductor pattern and the first gate electrode.
• The device also includes a complementary structure that contacts the second side surface of the single crystal semiconductor pattern.
• The complementary structure consists of an oxide semiconductor layer.

Original Abstract Submitted

A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a higher level than the first source/drain region; a first gate electrode facing a first side surface of the first single crystal semiconductor pattern; a first gate dielectric layer, the first gate dielectric layer including a portion between the first single crystal semiconductor pattern and the first gate electrode; and a complementary structure in contact with a second side surface of the first single crystal semiconductor pattern, wherein the complementary structure includes an oxide semiconductor layer.