US Patent Application 18190300. CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Sang Kyun Kim of Suwon-si (KR)
CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18190300 Titled 'CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME'
Simplified Explanation
This abstract describes a method of chemical mechanical polishing, which involves polishing an object using a slurry containing abrasive particles, a thermoresponsive inhibitor, and deionized water. The slurry is applied at a certain temperature, and then the slurry is removed from the object at a different temperature. The thermoresponsive inhibitor is a type of polymer that undergoes a phase-transition between the two temperatures. At the first temperature, the polymer is attracted to a hydrophobic layer on the object's surface, and at the second temperature, it is released from the surface.
Original Abstract Submitted
A chemical mechanical polishing method may include polishing a polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature different from the first temperature. The chemical mechanical polishing slurry may include abrasive particles, a thermoresponsive inhibitor, and deionized water. The thermoresponsive inhibitor may include a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature. The thermoresponsive polymer may be adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.
