SEMICONDUCTOR DEVICES

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SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18189538 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device with a unique structure and composition.

The device includes a substrate with an active region and a gate structure intersecting the active region.
Multiple channel layers are arranged on the active region and surrounded by the gate structure.
Source/drain regions are located on opposite sides of the gate structure and connected to the channel layers.
Each channel layer consists of three semiconductor layers stacked on top of each other.
The first and third layers are made of silicon (Si), while the second layer is made of silicon-germanium (SiGe).
The side surfaces of the semiconductor layers are in contact with the gate structure.

Original Abstract Submitted

A semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, a plurality of channel layers spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, on the active region and surrounded by the gate structure, and source/drain regions in recess regions of the active region, on opposite sides adjacent to the gate structure and electrically connected to the plurality of channel layers. Each of the plurality of channel layers includes first to third semiconductor layers sequentially stacked in the third direction, the first and third semiconductor layers include silicon (Si), and the second semiconductor layer includes silicon-germanium (SiGe). Side surfaces of the first to third semiconductor layers in the second direction are in contact with the gate structure.

US Patent Application 18189538. SEMICONDUCTOR DEVICES simplified abstract

Contents

SEMICONDUCTOR DEVICES

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