US Patent Application 18163233. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Taiki Hoshi of Tokyo (JP)

Kenji Suzuki of Tokyo (JP)

Yuki Haraguchi of Tokyo (JP)

Haruhiko Minamitake of Tokyo (JP)

Hidenori Koketsu of Tokyo (JP)

Yusuke Miyata of Tokyo (JP)

Akira Kiyoi of Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18163233 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with specific regions and impurity concentrations.

  • The device includes a drift region, a hydrogen buffer region, a flat region, and a carrier injection layer.
  • The drift region is formed in a semiconductor substrate and is of the first conductive type.
  • The hydrogen buffer region is positioned on the back surface side of the drift region and has a higher impurity concentration than the drift region.
  • The hydrogen buffer region contains hydrogen as impurities.
  • The flat region is positioned on the back surface side of the hydrogen buffer region and has a higher impurity concentration than the drift region.
  • The carrier injection layer is positioned on the back surface side of the flat region and has a higher impurity concentration than both the hydrogen buffer region and the flat region.
  • Both the hydrogen buffer region and the flat region have a constant oxygen concentration ranging from 1E16 atoms/cm to 6E17 atoms/cm.


Original Abstract Submitted

A semiconductor device includes a drift region that is of first conductive type and formed in a semiconductor substrate; a hydrogen buffer region that is of first conductive type, positioned on the back surface side of the drift region, contains hydrogen as impurities, and has impurity concentration higher than impurity concentration of the drift region; a flat region that is of first conductive type, positioned on the back surface side of the hydrogen buffer region, and has impurity concentration higher than impurity concentration of the drift region; and a carrier injection layer that is of first or second conductive type, positioned on the back surface side of the flat region, and has impurity concentration higher than impurity concentrations of the hydrogen buffer region and the flat region. The hydrogen buffer region and the flat region each have a constant oxygen concentration of 1E16 atoms/cmto 6E17 atoms/cminclusive.

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