US Patent Application 18155532. INTEGRATED CIRCUIT DEVICES simplified abstract

INTEGRATED CIRCUIT DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Juri Lee of Suwon-si (KR)]]

[[Category:Taegon Kim of Suwon-si (KR)]]

[[Category:Seungmo Kang of Suwon-si (KR)]]

[[Category:Sihyung Lee of Suwon-si (KR)]]

INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155532 titled 'INTEGRATED CIRCUIT DEVICES

Simplified Explanation

The patent application describes an integrated circuit (IC) device with a specific structure for the source/drain region.

• The IC device has a fin-type active region on a substrate, a channel region, a gate line, and a source/drain region.
• The source/drain region is divided into a lower region and an upper region.
• The lower region contains a specific silicon isotope (Si, Si, or Si), while the upper region has a higher content of a Si element compared to the lower region.

Original Abstract Submitted

An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain region. The source/drain region includes a lower source/drain region and an upper source/drain region. The lower source/drain region includes at least one silicon isotope selected from silicon isotopes of Si, Si, and Si, and the upper source/drain region includes a Si element at a content higher than a content of the Si element in the lower source/drain region.