US Patent Application 18151775. SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR JUNCTION simplified abstract
SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR JUNCTION
Organization Name
Inventor(s)
Keunwook Shin of Yongin-si (KR)
Changseok Lee of Suwon-si (KR)
Kyung-Eun Byun of Seongnam-si (KR)
SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR JUNCTION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18151775 Titled 'SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR JUNCTION'
Simplified Explanation
This abstract describes a semiconductor device that consists of several layers. The first layer is made of a semiconductor material, and it is facing a metal layer that has conductivity. Between these two layers, there is a layer made of a 2D material. Additionally, there is a second semiconductor layer between the first semiconductor layer and the 2D material layer. This second semiconductor layer is made of a different material than the first semiconductor layer, specifically germanium. The second semiconductor layer and the 2D material layer are in direct contact with each other.
Original Abstract Submitted
A semiconductor device may include a first semiconductor layer including a first semiconductor material; a metal layer facing the first semiconductor layer and having conductivity; a 2D material layer between the first semiconductor layer and the metal layer; and a second semiconductor layer between the first semiconductor layer and the 2D material layer. The second semiconductor layer may include a second semiconductor material different from the first semiconductor material. The second semiconductor layer and the 2D material layer may be in direct contact with each other. The second semiconductor material may include germanium.
