US Patent Application 18144885. SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Byeongjoo Ku of Suwon-si (KR)]]

[[Category:Keunnam Kim of Suwon-si (KR)]]

[[Category:Kiseok Lee of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18144885 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device that includes various components such as a substrate, bit lines, a mold insulating layer, channel layers, word lines, and a trimming insulating block.

  • The device has a substrate with different areas for cell array, periphery circuit, and interface.
  • Bit lines are arranged in the cell array area and extend in a horizontal direction.
  • A mold insulating layer is placed on the bit lines and has openings in a different horizontal direction.
  • Channel layers are located on the bit lines within each opening of the mold insulating layer.
  • Word lines are positioned on the channel layers and extend from the cell array area to the interface area.
  • The word lines consist of a first word line on one side of each opening and a second word line on the other side.
  • A trimming insulating block is present in the interface area and connected to the ends of the first and second word lines.


Original Abstract Submitted

A semiconductor device includes: a substrate including a cell array area, a periphery circuit area, and an interface area; bit lines arranged in the cell array area and extending in a first horizontal direction; a mold insulating layer arranged on the bit lines and including openings extending in a second horizontal direction; channel layers respectively arranged on the bit lines in each of the openings; word lines respectively arranged on the channel layers and extending in the second horizontal direction from the cell array area to the interface area, the word lines including a first word line on a first sidewall of each opening of the mold insulating layer and a second word line on a second sidewall of the opening; and a trimming insulating block arranged in the interface area and connected to an end of the first word line and an end of the second word line.