US Patent Application 18143983. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Changbo Lee of Asan-si (KR)]]

[[Category:KWANHOO Son of Yongin-si (KR)]]

[[Category:JOON SEOK Oh of Seoul (KR)]]

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18143983 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes semiconductor devices and methods of fabricating them.

  • The method involves using a carrier substrate with a conductive layer.
  • A semiconductor die is placed on the carrier substrate.
  • An insulating layer is formed to cover the semiconductor die.
  • A via hole is created in the insulating layer to expose the conductive layer of the carrier substrate.
  • A plating process is performed using the conductive layer as a seed to fill the via hole.
  • A first redistribution layer is formed on the first surface of the semiconductor die and the insulating layer.
  • The carrier substrate is removed.
  • A second redistribution layer is formed on the second surface of the semiconductor die and the insulating layer.


Original Abstract Submitted

Disclosed are semiconductor devices and methods of fabricating the same. The method comprises providing a carrier substrate that includes a conductive layer, placing a semiconductor die on the carrier substrate, forming an insulating layer to cover the semiconductor die on the carrier substrate, forming a via hole to penetrate the insulating layer at a side of the semiconductor die and to expose the conductive layer of the carrier substrate, performing a plating process in which the conductive layer of the carrier substrate is used as a seed to form a via filling the via hole, forming a first redistribution layer on a first surface of the semiconductor die and the insulating layer, removing the carrier substrate, and forming a second redistribution layer on a second surface of the semiconductor die and the insulating layer, the first surface and the second surface being located opposite each other.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18143983._SEMICONDUCTOR_DEVICE_AND_METHOD_OF_FABRICATING_THE_SAME_simplified_abstract&oldid=9149"