US Patent Application 18132198. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Moonyoung Jeong of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18132198 Titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. It involves creating trenches in a substrate and filling them with layers that protrude from the substrate. Spacers are then formed on the sidewalls of these protrusions, exposing portions of the substrate. Additional trenches are created around the first ones by etching the exposed substrate. These second trenches are filled with more layers. The first filling layers and spacers are then removed. Finally, a gate material layer is applied to the inner walls of the first trenches, and gate structures are formed by separating this layer.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a plurality of first trenches in a substrate. A plurality of first filling layers is formed that fills the first trenches and have protrusions extending to protrude from the substrate. Spacers are formed on sidewalls of the protrusions of the first filling layers. The spacers expose portions of the substrate between adjacent first filling layers. A plurality of second trenches is formed around the first trenches by etching the portions of the substrate exposed by the spacers. A plurality of second filling layers is formed that fills the second trenches. All of the first filling layers and the spacers are removed. A gate material layer is formed that conformally covers inner walls of the first trenches. A pair of gate structures is formed in each of the first trenches by separating the gate material layer.
