US Patent Application 18127895. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Inventors
Sang Cheol Na of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Young Woo Kim of Suwon-si (KR)
Anthony Dongick Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for patent application number 18127895 Titled 'SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a semiconductor device that includes several components. These components include a first substrate, an active pattern, a gate electrode, a source/drain region, a first interlayer insulating layer, a sacrificial layer, a lower wiring layer, a through via trench, a through via, a recess, and a through via insulating layer. The device is designed to allow for efficient electrical connections within the semiconductor.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrate; a gate electrode extending on the active pattern; a source/drain region on the active pattern; a first interlayer insulating layer on the source/drain region; a sacrificial layer on the first substrate; a lower wiring layer on a lower surface of the sacrificial layer; a through via trench extending to the lower wiring layer by passing through the first interlayer insulating layer and the sacrificial layer in a vertical direction; a through via inside the through via trench and connected to the lower wiring layer; a recess inside the sacrificial layer and protruding from a sidewall of the through via trench in the second horizontal direction; and a through via insulating layer extending along the sidewall of the through via trench and into the recess.