US Patent Application 18117262. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Ki Hwan Kim of Suwon-si (KR)]]

[[Category:Kyung Ho Kim of Suwon-si (KR)]]

[[Category:Kang Hun Moon of Suwon-si (KR)]]

[[Category:Cho Eun Lee of Suwon-si (KR)]]

[[Category:Yong Uk Jeon of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18117262 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with a unique structure for improved performance.

• The device includes an active pattern with a lower pattern and multiple sheet patterns spaced apart from the lower pattern in one direction.
• It also has gate structures with gate electrodes and gate insulating films, arranged in a second direction and spaced apart from each other.
• Source/drain recesses are defined between adjacent gate structures, and a source/drain pattern fills these recesses.
• The source/drain pattern consists of a first semiconductor liner, which extends along the sidewalls and bottom surface of the recesses.
• On top of the first semiconductor liner, there are second semiconductor liners that are doped with carbon and also extend along the sidewalls and bottom surface of the recesses.
• Finally, a filling semiconductor film is on top of the second semiconductor liners and fills the source/drain recess.
• The first semiconductor liners are in contact with the lower pattern and sheet patterns, and they include regions without carbon doping.

Original Abstract Submitted

A semiconductor device comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a plurality of gate structures disposed on the lower pattern to be spaced apart from each other in a second direction, each of the gate structures including a gate electrode and gate insulating films, source/drain recesses defined between adjacent gate structures and a source/drain pattern filling the source/drain recesses. Each source/drain pattern may include a first semiconductor liner, which extend along sidewalls and a bottom surface of the source/drain recesses, second semiconductor liners, which are on the first semiconductor liners and extend along the sidewalls and the bottom surface of the source/drain recesses, and a filling semiconductor film, which is on the second semiconductor liners and fills the source/drain recess. The second semiconductor liners may be doped with carbon, and the first semiconductor liners may be in contact with the lower pattern and the sheet patterns, while the first semiconductor liners may include carbon-undoped regions.