US Patent Application 18115116. SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18115116 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with a gate electrode, a memory body structure, a source layer, and a drain layer.
- The gate electrode is located on a substrate.
- The memory body structure extends through the gate electrode.
- The source layer, located at one end of the memory body structure, is made of germanium doped with p-type impurities.
- The drain layer, located at the other end of the memory body structure, is made of a metal or metal alloy.
- The memory body structure consists of undoped polysilicon.
- The memory body structure also includes a charge storage pattern on the sidewall of the body.
- A blocking pattern is present on the outer sidewall of the charge storage pattern and makes contact with the gate electrode.
Original Abstract Submitted
A semiconductor device includes a gate electrode on a substrate, a memory body structure extending through the gate electrode, a source layer at an end portion of the memory body structure and including germanium doped with p-type impurities, and a drain layer at another end portion of the memory body structure and including a metal or a metal alloy. The memory body structure may include a body including undoped polysilicon, a charge storage pattern on a sidewall of the body, and a blocking pattern on an outer sidewall of the charge storage pattern and contacting the gate electrode.
