US Patent Application 18097924. INSPECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE USING THE SAME simplified abstract

INSPECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Donghyun Lee of Suwon-si (KR)]]

[[Category:Sungyoon Ryu of Suwon-si (KR)]]

[[Category:Sooseok Lee of Suwon-si (KR)]]

[[Category:Younghoon Sohn of Suwon-si (KR)]]

INSPECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18097924 titled 'INSPECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Simplified Explanation

The patent application describes an inspection method that involves using ultrasonic signals to inspect various observation sites and a target structure.

• The method includes inspecting a plurality of first observation sites by detecting ultrasonic signals emitted from these sites.
• It also involves inspecting a plurality of second observation sites by detecting ultrasonic signals emitted from these sites.
• Finally, the method includes inspecting a target structure by detecting an ultrasonic signal emitted from the structure.
• The target structure consists of a structure of interest.
• The first observation sites are intermediate results of forming the target structure, while the second observation sites are structures modified from the target structure.

Original Abstract Submitted

An inspection method is provided. The inspection method includes inspecting a plurality of first observation sites by detecting ultrasonic signals emitted from the plurality of first observation sites, inspecting a plurality of second observation sites by detecting ultrasonic signals emitted from the plurality of second observation sites; and inspecting a target structure by detecting an ultrasonic signal emitted from the target structure, where the target structure includes a structure of interest, and wherein the plurality of first observation sites are intermediate results of forming the target structure, respectively, and the plurality of second observation sites are structures modified from the target structure.