US Patent Application 18094452. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Su Young Bae of Suwon-si (KR)]]

[[Category:Jae Yeol Song of Suwon-si (KR)]]

[[Category:Oh Seong Kwon of Suwon-si (KR)]]

[[Category:Sang Yong Kim of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18094452 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with a specific structure and arrangement of layers within a gate trench.

• The device includes a substrate and an active pattern on the substrate, extending in one direction.
• A gate spacer is placed along the sidewalls of the gate trench on the active pattern, extending in a different direction.
• A first gate insulating layer is positioned along the sidewall and bottom surface of the gate trench.
• A first conductive layer is placed on the first gate insulating layer inside the gate trench.
• A second gate insulating layer, made of a different material than the first gate insulating layer, is placed on top of the first conductive layer.
• A second conductive layer is then placed on the second gate insulating layer inside the gate trench.
• Finally, a third conductive layer is added to fill the remaining inner space of the gate trench.

Original Abstract Submitted

A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate spacer disposed along each of sidewalls of a gate trench on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a first gate insulating layer disposed along a sidewall and a bottom surface of the gate trench, a first conductive layer disposed on the first gate insulating layer inside the gate trench, a second gate insulating layer disposed on the first conductive layer inside the gate trench, and including a material different from a material of the first gate insulating layer, a second conductive layer disposed on the second gate insulating layer inside the gate trench, and a third conductive layer disposed on the second conductive layer so as to fill a remaining inner space of the gate trench.