US Patent Application 18076963. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Seung Min Song of Suwon-si (KR)]]

[[Category:Hyo-Jin Kim of Suwon-si (KR)]]

[[Category:Kyung Hee Cho of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18076963 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with a substrate and active patterns that extend in a first direction.

  • The device includes a gate structure that extends in a second direction intersecting the first direction.
  • There is also a cutting pattern on the substrate to cut the gate structure.
  • The gate structure includes a lower gate electrode, an upper gate electrode, and an insulating pattern.
  • The lower active pattern penetrates through the lower gate electrode, and the upper active pattern penetrates through the upper gate electrode.
  • The insulating pattern is arranged with the upper gate electrode along the second direction.


Original Abstract Submitted

A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and a cutting pattern on the substrate, the cutting pattern extending in the first direction to cut the gate structure. The gate structure includes a lower gate electrode through which the lower active pattern penetrates, an upper gate electrode which is connected to the lower gate electrode and through which the upper active pattern penetrates, and an insulating pattern on one side of the cutting pattern, the insulating pattern being arranged with the upper gate electrode along the second direction.

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