US Patent Application 18040927. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Koichiro Nishizawa of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18040927 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME'
Simplified Explanation
The abstract describes a process where a substrate with a GaN surface is placed in a solution containing potassium hydroxide and a catalyst metal salt. Ultraviolet light is used to deposit a catalyst metal onto the GaN surface. Then, a metal film is formed on the GaN surface using electroless plating.
Original Abstract Submitted
A substrate () having a GaN surface () is immersed in a catalyst metal solution () containing potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal () on the GaN surface (). A metal film () is formed on the GaN surface () having the catalyst metal () deposited thereon by electroless plating.
