US Patent Application 17988267. RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
In Ku Kang of Icheon-si Gyeonggi-do (KR)
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17988267 titled 'RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The present technology is about a resistive memory device and its manufacturing method.
- The resistive memory device consists of a stack structure with alternating interlayer insulating layers and conductive layers.
- The stack structure has a hole passing through it vertically.
- Along the sidewall of the hole, there is a sequence of a gate insulating layer, a channel layer, and a variable resistance layer.
- A high dielectric layer is formed between the channel layer and the gate insulating layer.
- The high dielectric layer is adjacent to the interlayer insulating layers in the stack structure.
Original Abstract Submitted
The present technology relates to a resistive memory device and a method of manufacturing the same. The resistive memory device includes a stack structure in which a plurality of interlayer insulating layers and a plurality of conductive layers are alternately stacked, a hole passing through the stack structure in a vertical direction, a gate insulating layer, a channel layer, and a variable resistance layer sequentially formed along a sidewall of the hole, and a high dielectric layer formed between the channel layer and the gate insulating layer, the high dielectric layer being adjacent to the plurality of interlayer insulating layers.
