US Patent Application 17891777. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG INNER SPACER PROTECTING LOWER WORK-FUNCTION METAL LAYER simplified abstract
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG INNER SPACER PROTECTING LOWER WORK-FUNCTION METAL LAYER
Organization Name
Inventor(s)
Byounghak Hong of Latham NY (US)
Seungchan Yun of Waterford NY (US)
Jaejik Baek of Watervliet NY (US)
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG INNER SPACER PROTECTING LOWER WORK-FUNCTION METAL LAYER - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17891777 Titled '3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG INNER SPACER PROTECTING LOWER WORK-FUNCTION METAL LAYER'
Simplified Explanation
The abstract describes a multi-stack semiconductor device that consists of two field-effect transistors. The lower transistor has a lower channel structure surrounded by a lower gate structure, while the upper transistor has an upper channel structure surrounded by an upper gate structure. The upper channel structure is narrower than the lower channel structure. A replacement metal gate inner spacer is formed between the lower and upper gate structures in regions where the lower channel structure is not vertically overlapped by the upper channel structure.
Original Abstract Submitted
Provided is a multi-stack semiconductor device that includes: a lower field-effect transistor in which a lower channel structure is surrounded by a lower gate structure including a lower gate dielectric layer, a lower work-function metal layer and a lower gate metal pattern; and an upper field-effect transistor in which an upper channel structure is surrounded by an upper gate structure including an upper gate dielectric layer, an upper work-function metal layer and an upper gate metal pattern, wherein a channel width of the upper channel structure is smaller than a channel width of the lower channel structure, and wherein a replacement metal gate (RMG) inner spacer is formed between the lower work-function metal layer and the upper work-function metal layer at regions where the lower channel structure is not vertically overlapped by the upper channel structure.
