US Patent Application 17887775. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887775 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a semiconductor structure and a method for manufacturing it.
- The method involves providing a substrate and creating an ion implantation area within the substrate.
- An initial word line trench is formed in the substrate, extending from the surface into the ion implantation area.
- The initial trench is then widened to create a word line trench, with the bottom of the trench being wider than the minimum width required.
- The purpose of widening the trench is not specified in the abstract.
Original Abstract Submitted
A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method includes: providing a substrate; forming an ion implantation area in the substrate, an upper surface of the ion implantation area having a distance from an upper surface of the substrate; forming an initial word line trench in the substrate, the initial word line trench extending from the upper surface of the substrate into the ion implantation area; widening the initial word line trench to form a word line trench, a width of a bottom of the word line trench being greater than a minimum width of the word line trench.
