US Patent Application 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract
MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY
Organization Name
Inventor(s)
Mustafa N. Kaynak of San Diego CA (US)
Patrick R. Khayat of San Diego CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17860701 titled 'MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY
Simplified Explanation
- The patent application describes a method for determining the sensitivity of memory cells to changes in adjacent cells in a memory device. - The method involves calculating a metric for each memory cell that reflects its sensitivity to changes in the threshold voltage of an adjacent cell. - Based on these sensitivity values, an aggregate measure of adjacent cell dependence is determined for each wordline in the memory device. - This aggregate measure is then compared to a threshold dependence value to identify wordline groups with high and low adjacent cell dependence. - A record is created to store the wordlines of the second group, indicating their corresponding location on the memory device die.
Original Abstract Submitted
Embodiments disclosed can include determining, for each memory cell connected to each wordline, a respective value of a metric that reflects a sensitivity of a threshold voltage associated with the memory cell to a change in a threshold voltage of an adjacent cell and determining, for each wordline, based on the determined sensitivity for each memory cell, a respective aggregate measure of adjacent cell dependence. They can further include comparing the determined aggregate measure of adjacent cell dependence to a threshold dependence value. They can also include identifying a first wordline group having wordlines with high adjacent cell dependence and a second wordline group having wordlines with low adjacent cell dependence and storing a record referencing the wordlines of the second wordline group, the record indicating a corresponding location on the die of the memory device.
