US Patent Application 17830802. DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES simplified abstract

DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Yu-Chung Lien of San Jose CA (US)

Li-Te Chang of San Jose CA (US)

Zhenming Zhou of San Jose CA (US)

DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17830802 titled 'DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES

Simplified Explanation

The patent application describes a method for optimizing memory page scans by selecting the appropriate trim value for subsequent page reads based on data state metrics.

• The method starts by performing a first page read on the first memory page using a first trim value.
• It then determines whether the first data state metric associated with the first page read meets a certain threshold criterion.
• If the first data state metric satisfies the threshold criterion, a second page read is performed on the first memory page using a second trim value.
• The method then determines whether the second data state metric associated with the second page read satisfies a second threshold criterion.
• If the second data state metric does not satisfy the first threshold criterion, the second trim value is selected for subsequent page reads during memory page scans.

Potential applications of this technology include:

• Memory management in computer systems and devices.
• Optimizing memory page scans in operating systems.
• Improving performance and efficiency of memory operations in various applications.

Original Abstract Submitted

A first page read on the first memory page utilizing a first trim value is performed responsive to initiating a memory page scan on a first memory page of a plurality of memory pages. Whether a first data state metric associated with the first page read satisfies a first threshold criterion is determined. A second page read on the first memory page utilizing a second trim value is performed responsive to determining that the first data state metric satisfies the first threshold criterion. Whether a second data state metric associated with the second page read satisfies a second threshold criterion is determined. The second trim value to perform subsequent page reads during memory page scans is selected responsive to determining that the second data state metric does not satisfy the first threshold criterion.