US Patent Application 17826815. ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Tsung-Hsueh Yang of Taichung City (TW)

Chang-Chih Huang of Taichung (TW)

Fu-Ting Sung of Yangmei City (TW)

Kuo-Chyuan Tzeng of Chu-Pei City (TW)

ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826815 titled 'ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for creating a dielectric isolation layer over a substrate, with electrodes and a phase change material (PCM) line formed on top. A dielectric encapsulation layer is then added to protect the PCM line, and a heater line can be included for additional functionality.

  • Dielectric isolation layer formed over a substrate
  • First and second electrodes formed on top of the isolation layer
  • Insulating matrix layer surrounds the electrodes
  • Phase change material (PCM) line placed on top of the insulating matrix layer
  • PCM line contacts the top surfaces of the first and second electrodes
  • Sidewalls of the PCM line and the insulating matrix layer are covered with a dielectric encapsulation layer
  • Heater line is added either underneath or on top of the PCM line
  • PCM switch device may be included as part of the overall invention


Original Abstract Submitted

A dielectric isolation layer having a planar top surface is formed over a substrate. A first electrode and a second electrode are formed over the planar top surface. An insulating matrix layer is formed around the first electrode and the second electrode. A phase change material (PCM) line is formed over the insulating matrix layer. A first end portion of the PCM line contacts a top surface of the first electrode and a second end portion of the PCM line contacts a top surface of the second electrode. A dielectric encapsulation layer is formed on sidewalls of the PCM line and over the PCM line and over a top surface of the insulating matrix layer. A heater line is formed prior to, or after, formation of the PCM line. The heater line underlies the PCM line or overlies the PCM line. A PCM switch device may be provided.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_17826815._ENCAPSULATED_PHASE_CHANGE_MATERIAL_SWITCH_AND_METHODS_FOR_FORMING_THE_SAME_simplified_abstract&oldid=11691"