US Patent Application 17826298. METHODS FOR DOPING SEMICONDUCTORS IN TRANSISTORS simplified abstract
Contents
METHODS FOR DOPING SEMICONDUCTORS IN TRANSISTORS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
METHODS FOR DOPING SEMICONDUCTORS IN TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17826298 titled 'METHODS FOR DOPING SEMICONDUCTORS IN TRANSISTORS
Simplified Explanation
The patent application describes methods for creating transistors using a single layer of semiconducting material with low contact resistance.
- The source and drain terminals are positioned on opposite sides of the semiconducting layer from the gate terminal.
- A dopant layer is applied to the contact and/or spacer regions of the semiconducting layer, covering them on the surface opposite the source and drain terminals.
- The gate dielectric layer directly contacts the semiconducting layer.
- This structure allows for high mobility in the semiconducting layer and reduces contact resistance.
Original Abstract Submitted
Methods for making transistors with a semiconducting monolayer and low contact resistance are disclosed. The source/drain terminals are on opposite sides of the semiconducting monolayer from the gate terminal. The contact and/or spacer regions of the semiconducting monolayer are covered with a dopant layer on the surface opposite the source/drain terminals. The gate dielectric layer directly contacts the semiconducting monolayer. The resulting structure maintains high mobility in the semiconducting layer and has low contact resistance.
