SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826174 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor device that includes vertically stacked semiconductor nanosheets, a gate structure, and a dielectric spacer.

The semiconductor nanosheets are arranged above a semiconductor substrate and act as channel regions.
The bottommost semiconductor nanosheet is the thinnest among the stacked nanosheets and is closest to the semiconductor substrate.
The gate structure surrounds each of the semiconductor nanosheets in a specific cross-section.
The dielectric spacer is positioned between the bottommost semiconductor nanosheet and the semiconductor substrate and is connected to the gate structure in the same cross-section.

Original Abstract Submitted

A semiconductor device includes semiconductor nanosheets, a gate structure, and a dielectric spacer. The semiconductor nanosheets are vertically stacked over each other, disposed above a semiconductor substrate, and serve as channel regions. A bottommost semiconductor nanosheet most proximate from the semiconductor substrate is a thinnest nanosheet of the semiconductor nanosheets. The gate structure surrounds each of the semiconductor nanosheets in a first cross-section, and the dielectric spacer is interposed between the bottommost semiconductor nanosheet and the semiconductor substrate and adjoins the gate structure in the first cross-section.

US Patent Application 17826174. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

Contents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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